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Download ET Comparison Brochure 
First Nano is proud to offer EasyTube™ turn key CVD systems for nanomaterial synthesis and thin film deposition. The EasyTube™ product line is designed and manufactured modularly. All EasyTube™ systems offer standard configuration including computer controlled operation, recipe driven process, automatic loader, and comprehensive software and hardware interlocks. There are different options available on each EasyTube™ system that allow user to configure the system in different ways to meet their special requirement. Those options include heating methods, wafer size, precursor chemicals selection, operating pressure, plasma choice, loadlock, etc. Most options can be added in the field; the EasyTube™ system can be continuously upgraded to meet the new requirement.
EasyTube™ system offers reliability, flexibility, and safety in one platform. First Nano provides recipes for nanomaterials synthesis and thin film deposition with the system. We also offer EasyGas™ Gas Cabinets and EasyExhaust™ Gas Conditioning systems to support the EasyTube System. The EasyTube™ turn key solution is clearly the best choice for your materials synthesis.
EasyTube™ Comparison Chart:
EQUIPMENT:
Reactor type
ET2000 (Thermal CVD): Hot wall tube furnace
ET3000 (Thermal CVD): Hot wall tube furnace
ET4000 (PECVD CVD): Cold wall metal chamber
ET6000 (Thermal CVD): Multi-stack hot wall tube furnace
Heating Method
ET2000 (Thermal CVD): Resistance or Infrared
ET3000 (Thermal CVD): Resistance, Infrared or RF heating
ET4000 (PECVD CVD): Infrared or Resistance heated
wafer chuck
ET6000 (Thermal CVD): Resistance
Max Temp
ET2000 (Thermal CVD): 1100 °C
ET3000 (Thermal CVD): 1100 °C (Resistance)
>1500 °C (RF)
ET4000 (PECVD CVD): 900 °C
ET6000 (Thermal CVD): 1100 °C
Wafer Size
ET (Thermal CVD): 2"
ET3000 (Thermal CVD): 2", 4", 6"
ET4000 (PECVD CVD): 2", 4", 6"
ET6000 (Thermal CVD): 4", 6", 8"
# of Wafer
ET2000 (Thermal CVD): Single
ET3000 (Thermal CVD): 5-10 by vertically positioning
ET4000 (PECVD CVD): Single
ET6000 (Thermal CVD)): Up to 100 Per Load
Wafer Rotation
ET2000 (Thermal CVD): N/A
ET3000 (Thermal CVD): Optional
ET4000 (PECVD CVD): Optional
ET6000 (Thermal CVD): N/A
Standard Vacuum
ET2000 (Thermal CVD): Optional
ET3000 (Thermal CVD): Optional
ET4000 (PECVD CVD): Included
ET6000 (Thermal CVD): Optional
Ultra High Vacuum
ET2000 (Thermal CVD): N/A
ET3000 (Thermal CVD): Optional
ET4000 (PECVD CVD): Optional
ET6000 (Thermal CVD): N/A
Loadlock
ET2000 (Thermal CVD): N/A
ET3000 (Thermal CVD): Optional
ET4000 (PECVD CVD): Optional
ET6000 (Thermal CVD): N/A
Plasma
ET2000 (Thermal CVD): N/A
ET3000 (Thermal CVD): Remote RF plasma (optional)
ET4000 (PECVD CVD): DC or RF plasma or both
ET6000 (Thermal CVD): RF (optional)
Gas Lines
ET2000 (Thermal CVD): Up to 8
ET3000 (Thermal CVD): Up to 12
ET4000 (PECVD CVD): Up to 12
ET6000 (Thermal CVD): Up to 6 for each tube
Liquid Precursor
ET2000 (Thermal CVD): 1 - 2
ET3000 (Thermal CVD): Up to 4 (Optional)
ET4000 (PECVD CVD): Up to 4 (Optional)
ET6000 (Thermal CVD): 1 for each tube (Optional)
Solid Precursor
ET2000 (Thermal CVD): Optional
ET3000 (Thermal CVD): Optional
ET6000 (Thermal CVD): Optional
System Size
ET2000 (Thermal CVD): 64" L x 30" W x 60" H
ET3000 (Thermal CVD): 96" L x 32" W x 70" H*
ET4000 (PECVD CVD): 96" L x 32" W x 70" H
ET6000 (Thermal CVD): 118" L x 42" W x 88" H
PROCESSES:
Nanomaterials
ET2000 (Thermal CVD): CNT, ZnO, GaN, Si, Ge
ET3000 (Thermal CVD): CNT, Si, Ge, ZnO, GaN, BN, Graphene
ET4000 (PECVD CVD): CNT, SiNW
ET6000 (Thermal CVD): CNT, SiNW
Others
ET2000 (Thermal CVD): Oxidation, RTP, annealing
ET3000 (Thermal CVD): III-V, SiGe thin film, oxidation,
annealing, RTP, Polysilicon, SiO2, Si3N4
ET4000 (PECVD CVD): Amorphous Si, u-Si, Polysilicon,
DLC, SiO2, Si3N4
ET6000 (Thermal CVD): Dry and wet oxidation, diffusion,
annealing, Polysilicon, SiO2, Si3N4
* ET3000 system size will be 120" L x 32" W x 70" H with some option items are selected likeremote plasma or 6" wafer. |
