Quote on MOCVD Equipment | Deposits a wide variety of III-V and II-VI layers with our MOCVD System

CVD Equipment Corporation > First Nano

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EasyTube^® 5000 Metal Organic CVD (MOCVD) System

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MOCVD Equipment System - Metal Organic CVD

First Nano’s EasyTube^® 5000 MOCVD System is an advanced research Reactor for depositing a wide variety of III-V and II-VI layers. The MOCVD system is capable of meeting the exact criteria needed for producing a wide range of material specifications and quality multi-layer abrupt junction structures in a reproducible fashion.

The system has the capability of depositing MOCVD layers of desired composition on a suitable substrate with graded composition (achieved by programming the user friendly software to ramp the appropriate flows). Exact process control produces MOCVD layers with abrupt interfaces or individual layers having a graded composition.

The ET5000 MOCVD is designed to meet your R&D requirements with flexibility and low operating cost. The system allows the deposition of the following on a single wafer up to 150mm in diameter.:

III-V (GaN, GaAs, AlGaN, InP, etc)
II-VI (ZnO, ZnS)
IV (Si, Ge, Strained Si)
Proprietary films

A temperature controlled showerhead delivering exact quantities of precursors and gases, coupled with substrate rotation during deposition, provides improved deposition uniformity.

Operated through our CVDWinPrC™ process control software, the MOCVD system automatically logs data and graphically displays the time dependent values of user selected parameters.
CVDWinPrC™ allows users to load preprogrammed recipes, modify, check /create new recipes and view real time or saved execution data.

Designed to meet today’s stringent safety standards, the MOCVD system can safely handle pyrophoric and toxic chemicals. The loadlock chamber option prevents process chamber contamination from air when loading/unloading substrates. The system has application customized safety protocols imbedded into the CVDWinPrC™ software.

EasyTube^® 5000 MOCVD Standard Equipment Configuration:

CVDWinPrC™ based process control software for Real Time Process Control, Data Logging
and Display, Recipe Generation and Editing
Quartz Process Chamber
Wafer Size to 50mm
Resistance Heater for Temperatures up to 1000 °C
Temperature Controlled Showerhead
Wafer Rotation
Molybdenum or SiC Coated Graphite Susceptor
Adjustable Distance between Wafer and Showerhead
Low Pressure Operation from 100 mtorr - 700 torr
Automatic Substrate Loading/Unloading
UHP Gas Lines
Metal Organic Liquid Source Bubblers
User Settable Warnings and Alarms
Comprehensive Software and Hardware Safety System
One (1) Year Warranty
Semi - S2/S8 and CE Compliant

MOCVD Equipment Options:

Stainless Steel Chamber
Horizontal Induction (RF) Heating for Process Temperatures >1500° C
Wafer size to 150mm
Loadlock to protect the Process Chamber from Ambient Atmosphere
Hydrogen Purifier
Ar/N₂ purged Glovebox
Air to Water Heat Exchanger for Cooling Water
Residual Gas Analyzer
EasyGas™ Hazardous Gas Cabinets
EasyPanel™ Gas Panels for Argon, Nitrogen, Helium, Oxygen
EasyExhaust™ Gas Conditioning System

MOCVD FACILITIES REQUIREMENTS
Electrical	208 V.A.C	3 Phase	40 – 60 AMP
Dimension	120” L	33” W	70” H
Exhaust	500 CFM
Cooling Water	2 GPM	50-75 PSIG
Pneumatic Supply	Clean Air or N₂	80 PSIG
Facility Nitrogen	20 SLPM	20 PSIG
Process Gases	Customer specified

* Note: Electrical varies with country; facilities requirements vary with system options.

Please contact us for further details.

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EasyTube® 5000 MOCVD Standard Equipment Configuration:

MOCVD Equipment Options:

EasyTube^® 5000 MOCVD Standard Equipment Configuration: