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EasyTube® 4000 Series
Plasma Enhanced CVD (PECVD) System

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Download ET 4000 PECVD Brochure pdf
Download Facility and System Layout Overview pdf

easytube 4000 Plasma Enhanced CVD (PECVD) System

First Nano’s EasyTube® 4000 Series manufactures advanced turnkey Plasma Enhanced Chemical Vapor Deposition (PECVD) for a wide variety of nanomaterials and thin film. The system is optimized for controlled process development and user safety.

Our EasyTube® 4200 PECVD is a small footprint PECVD for wafer sizes up to 4," while the
EasyTube® 4300 PECVD offers up to a 6" wafer and an optional loadlock.

Our modular platform houses several key process components and multiple advanced options to meet your specific process requirements. Options are field upgradable.

Designed to meet today’s stringent safety standards. Some of the safety features offered are alarms for low cabinet exhaust, automatic inert gas purge, integrated gas leak detection, exhaust gas dilution, low cooling water, high low/deviation on temperature /gas flow/ pressure, end cap seal failure, exhaust line purge and more. Alarms displayed on the monitor are audibly announced, data logged and can be remotely transmitted. Depending on a user recipe configuration, upon an alarm occurance the system can either abort the recipe or switch to safe system shutdown mode.

Operated through our CVDWinPrC™ controlled recipe, it automatically logs data and graphically shows the time dependent value of user selected parameters. CVDWinPrC™allows users to logically access preprogrammed recipes, modify and/or create recipes and view real time or saved execution data.

EasyTube® 4000 PECVD Series is capable of a myriad of materials including:

  • Carbon Nanotubes and Graphene
  • Silicon Nanowire
  • Thin Films: Amorphous Silicon, Polysilicon, Silicon Nitride and Silicon Dioxide

Standard Configuration:

  • CVDWinPrC™ based process control software for Real Time Process Control, Data Logging
    and Display, Recipe Generation and Editing
  • Preprogrammed Process Recipes
  • Temperatures up to 1100°C
  • Wafer Sizes 2" (ET4200)
    Wafer Sizes 4” (ET4300)
  • Shower Head Gas Delivery
  • DC Plasma: 1KW, 1000/500 Volt, RF Plasma 600W @13.56 MHz (ET4300)
  • Low Pressure Operation (100 mtorr – 700 torr), < 30 mtorr Base Pressure
  • Cantilevered Automatic Substrate Loading/Unloading System
  • 4 Mass Flow Controlled UHP Gas Lines
  • Comprehensive Software and Hardware Safety Interlocks
  • One (1) Year Warranty
  • Semi - S2/S8 and CE Certified

Options:

  • Wafer Size 4"
    Wafer Size 6" (for ET4300 only)
  • Loadlock (for ET4300 only)
  • DC Plasma: 1KW, 1000/500 Volt
  • Liquid Precursor Vapor Deliver Kit
  • Ultra High Vacuum with Base Pressure < 10-6 torr
  • Residual Gas Analyzer (RGA)
  • Additional Mass Flow Controlled UHP Gas Lines
  • Air to Water Heat Exchanger for Cooling Water
  • EasyGas™ Hazardous Gas Cabinets
  • EasyPanel™ Gas Panels for Argon, Nitrogen, Helium, Oxygen
  • EasyExhaust™ Gas Conditioning System

CNT Properties Made by DC-PE-CVD

  • Growth Temperature: < 600 °C
  • Length: 1 – 30 μm
  • Diameter: 20 – 200 nm
  • Density: < 109 / cm2
  • Substrate: Si, Glass, Cu, etc.
FACILITIES REQUIREMENTS
Electrical 208 V.A.C 3 Phase
Dimension

ET4200: 64" L
ET4300: 96" L

30" W
33" W
60" H
70" H
Exhaust ET4200: 300 CFM
ET4300: 500 CFM
Cooling Water 1 GPM 50-75 PSIG
Pneumatic Supply Clean Air or N2 80 PSIG
Facility Nitrogen 20 SLPM 20 PSIG
Process Gases Customer specified

* Note: Electrical varies with country; facilities requirements vary with system options.

Please contact us for further details.


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1860 Smithtown Ave | Ronkonkoma, NY 11779 | Tel 631.981.7081 | Fax 631.981.7095
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