ZnO and Other Semiconducting Nanowires

High quality ZnO nanowires can be deposited either vertically aligned or randomly oriented on Si and Sapphire substrates. With the unique solid source vapor generator design, ZnO nanowires with a uniform length and diameter can be deposited on the whole 2" wafer. The same method can be applied to other oxides and nitride nanowire growth. These nanowires are used for applications such as optoelectronic and Piezoelectric.

ZnO Nano Wire Photoluminescence Spectrum (Image 3 on right)
Non-Aligned NW's- typical:
- Diameters range from 20-40nm
- Lengths ~10µm

Vertically Aligned requires much more development but we have achieved:
-Diameters ~80-100µm
-Height ~2µm

Transmission spectra for APCVD F:ZnO and LPCVD B:ZnO coatings on soda lime glass
(Image 4 on right)
Transmission spectra for APCVD F:ZnO and LPCVD B:ZnO coatings on soda lime glass. Deposition conditions for APCVD F:ZnO: growth temperature=400 oC, chamber pressure=760 Torr, Ethanol/DEZ mole ratio=8.5, C3F6/DEZ mole ratio=0.85. For LPCVD B: ZnO: Growth temperature=160oC, chamber pressure =0.85 Torr, H2O/DEZ mole ratio=1.2, B2H6/DEZ mole ratio=0.03.

Learn more about making ZnO nanowire using solid source heater