CVDGraphene™ Turn-Key Equipment

First Nano offers several EasyTube™ products for Graphene deposition to accommodate different sample sizes and throughput demands. We offer Process Equipment, Gas Delivery Systems and Gas Abatement systems individually or as a complete Turn-Key System.

Graphene is a monolayer of carbon atoms tightly packed into a two-dimensional (2D) honeycomb lattice which can be made by several methods such as scotch-tape, chemical exfoliation, Chemical Vapor Deposition induced growth, graphite oxide reduction and more. Single-layer or Multi-layer Graphene research starter materials manufactured with EasyTube™ CVD processing system can be purchased through our wholly owned subsidiary, CVD Materials Corporation.

EasyTube™ System Advantages:
Our field proven system performance and solid customer base establishes First Nano as the clear choice in leading edge nanotechnology development equipment for the advanced research facility.

• Proven Processes: Our research scientists have developed CVDGraphene™ growth recipes on both Ni and Cu surfaces in our Application Laboratory and we continue to make further advances.
• Precise control of temperatures and gas flows, pressure and heating / cooling rates.
• Fully automatic control, recipe driven repeatable processes with industrial strength safety systems.
• CVDWinPRC™ software running on PC and communicating with PLC for optimum safety and process documentation/repeatability and control.
• The hot wall tube furnace provides for a uniform temperature over large areas and can grow Graphene not only on flat substrates, but also on a roll of Cu foil for increased surface area.
• Comprehensive safety interlocks, Semi-S2, S8 and CE compliant
• Fully compatible for CNT growth.
• Supporting equipment- Gas Cylinder Cabinet (gas delivery) and an Exhaust Gas Conditioning System can be provided as a turn key package.

Standard Configurations:

• 3-zone tube furnace up to 1100°C
  
• Standard Fast cooling Furnace (> 30°C/min)
  
• Three Gas lines: Ar, H2, CH4
• Integrated vacuum control system
• Fully automatic operation
• Sample can be a flat Si wafer or Cu foil roll:
  - ET101: 1” x 4”
  - ET2000: 2” x 6”
  - ET3000: 4” x 8”
  - ET6000: 4 stack furnace

Typical CVD Growth Conditions:

• Growth Temperature: 900°C to 1050°C
• Substrate cooling rate is important for layer thickness control
• Substrate: Ni or Cu coated Si wafer, or Ni or Cu foil
• Pressure: <1 Torr - 760 Torr
• Process gases: Nitrogen, Hydrogen & Methane
• Annealing controls the grain size for metal films
• Growth time: typical 5 -30 minutes
• Fast cooling (>1.5°C/s) is typically required for making 1-3 layer Graphene films on Ni surfaces

Potential applications of Graphene include:

• Ultra fast transistors and IC’s,
• Transparent conductive electrodes
• High contrast TEM grids for bio/medical/material characterization
• Sensors
• nMEMS

Among the synthesis methods, the Chemical Vapor Deposition methods is best for producing Graphene material with:

• Low defects
• Good uniformity
• Controlling the number of Graphene layers
• Relatively easy to scale up production
• The Graphene films made on metal film or foil surfaces can be easily removed and transferred to other substrate surfaces.
  

Optional Configuration for Fast Cooing- In addition to standard configurations, we also provide several options to further improve cooling rates and throughput for Graphene growth on Ni films such as:

• HotLoader™: enables loading or unloading of a sample from the hot furnace. This feature allows for faster cooling rate. It also improves throughput by eliminating the need to wait for the furnace to cool down. Available on ET2000/ET3000/ET6000 only.
• Rolling Furnace: Moves the hot furnace away from process zone for faster cooling rates. Requires additional floor space. Available on ET3000/ET6000 only.

Please contact us for further details on our equipment or lab use.